SPN7002 description applications the SPN7002 is the n-cha nnel enhancement mode field effect transistors are produced using high cell density dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. they can be used in most applications requiring up to 300ma dc and can deliver pulsed currents up to 1.0a. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? high saturation current capability. direct logic-level interface: ttl/cmos ? battery operated systems ? solid-state relays features pin configuration(sot-23 , sot-323) ? 60v/0.50a , r ds(on) = 6.0 ? @v gs =10v ? 60v/0.30a , r ds(on) = 7.0 ? @v gs =5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23 and sot-323 package design part marking product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN7002s23rg sot-23 s72yw SPN7002s23rgb sot-23 s72yw SPN7002s32rg sot-323 s72yw SPN7002s32rgb sot-323 s72yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN7002s23rg : tape reel ; pb ? free SPN7002s23rgb : tape reel ; pb ? free; halogen ? free SPN7002s32rg : tape reel ; pb ? free SPN7002s32rgb : tape reel ; pb ? free; halogen ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 60 v gate ?source voltage - continuous v gss 20 v gate ?source voltage - non repetitive ( t p < 50 s) v gss 40 v continuous drain current(t j =150 ) t a =25 i d 0.5 a pulsed drain current ( ? ) i dm 1.0 a power dissipation t a =25 p d 0.35 w operating junction temperature t j -55 ~ 150 storage temperature range t stg -55 ~ 150 thermal resistance-junction to ambient r ja 375 /w ( ? ) pulse width limited by safe operating area SPN7002 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 60 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 1.7 2.5 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =48v,v gs =0v 1 ua v ds =48v,v gs =0v t j =55 10 drain-source on-resistance r ds(on) v gs =10v,i d =0.50a 2.5 6.0 ? v gs = 5v,i d =0.30a 3.3 7.0 source-drain current i sd 0.35 a source-drain current (pulsed) i sdm (2) 1.4 a forward transconductance gfs(1) v ds = 10 v, i d = 0.5 a 0.6 s diode forward voltage v sd (1) v gs = 0 v, i s = 0.12a 0.85 1.5 v dynamic total gate charge q g v dd = 30 v, i d = 1 a, v gs = 5 v 1.4 2.0 nc gate-source charge q gs 0.8 gate-drain charge q gd 0.5 input capacitance c iss v ds = 25 v, f = 1 mhz, v gs = 0 43 60 pf output capacitance c oss 20 30 reverse transfer capacitance c rss 6 10 turn-on time t d(on) v dd = 30 v, i d = 0.5 a r g = 4.7 ? v gs = 4.5 v 5 20 ns t r 15 turn-off time t d(off) 7 20 t f 8 (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. SPN7002 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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